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The CMP Business Division of Doosan Mecatec gained
recognition for its superb
technical power by successfully developing the 200mm
CMP, an item of pre-process
equipment for semiconductor manufacturing which
it has been supplying to numerous
large semiconductor manufacturers since 2004.
We have continued to develop 300mm? CMP equipment,
and have completed
verification for mass production. We are proud to
be the only company in Korea to
have developed CMP equipment, and our pride will
increase with the development
of newer, more advanced equipment.
Focusing our capability on CMP equipment with wider
and enhanced specifications
to meet the requirements for next-generation semiconductors,
Doosan Mecatec is
rapidly transforming itself into the leading provider
of specialized semiconductor
equipment in the global market. |
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CMP technology has been started for solving problem, the depth of a focus which is permitted by Lithography decreases more than stepheight according to accumulization with global planarization characteristic ,since1998. This is a must for developing and producing the next generation device.
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The process uses an abrasive and corrosive chemical slurry (commonly a colloid) in conjunction with a polishing pad and retaining ring, typically of a greater diameter than the wafer. The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated with different axes of rotation (i.e., not concentric). This removes material and tends to even out any irregular topography, making the wafer flat or planar. This may be necessary in order to set up the wafer for the formation of additional circuit elements. For example, this might be necessary in order to bring the entire surface within the depth of field of a photolithography system, or to selectively remove material based on its position.
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Grinding speed of Thin film is expressed follow preston formula.
Grinding Speed ( Reomoval Rate = ΔH/Δt = KpP(Δs/ Δ t )
ΔH is height change of surface, Δt is change of grinding time, P is grinding pressure, Δs/Δ/t is linear speed of grinding , Kp is Preston coefficient. According to formula, Grinding Speed is in proportion to speed of revolution of grinding platen and grinding pressure in wafer. Generally CMP process is classified as oxide film CMP, metal film CMP with materials, or planarization CMP, Isolation CMP with function.
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Next ficture is Grinding Process System in Semiconductor CMP Equipment. This process is organized wafer transfer, grinding process, wafer washing process, wafer drying process.
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