CMP/Display > CMP > Product Introduction

- User-oriented software, easy for system driving and control. - 6 or more individual processes can be implemented with 1 grinding recipe. - Display structure which enables immediate action for system driving errors. - Real time-based monitoring of equipment and process status in driving.     System Configuration Wafer Size 8 inch, 4/5/6 inch options Dimensions 1000 x 1325 x 2050 (W x L x H) Footprint 2.7 ㎡ Applicable Thin Film oxidized and metal thin films In-situ and Ex-situ pad conditioning Grind carrier in clamp structure Grinding Process Specifications - Grinding speed ≥ 3000 A/min (TEOS. W) - Grinding Uniformity ≤ 5.0%(1σ) - Grinding Reproducibility ≤ 2.0%(1σ) - Scratch ≤ 10 ea.(KLA 2135)     System Configuration Dimension 1670 x 3100 x 2300 (W x L x H) Footprin 5.17㎡, Weight : 3 ton Applicable Thin Film oxidized and metal thin films After-washing system connection. Applicable to 2 or 3 kinds of chemicals. Physical washing using PVA brush. Drying mechanism by high-speed rotation. Capable of implementing an automated system with a wafer transfer robot Grinding Process Specifications - Grinding speed ≥ 3000 A/min (TEOS. W) - Grinding Uniformity ≤ 5.0%(1σ) - Grinding Reproducibility ≤ 2.0%(1σ) - Pollutant Particle ≤ 25ea(SFS 6420, @0.2㎛ - Scratch ≤ 10 ea.(KLA 2135)